PART |
Description |
Maker |
HYS72T512122HFN-3.7-A HYS72T512022HFN-3.7-A |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM 512M X 72 DDR DRAM MODULE, PDMA240
|
Qimonda AG
|
EDE1104ABSE-5C-E EDE1108ABSE-5C-E EDE1116ABSE-5C-E |
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68 1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.6 ns, PBGA68 1G bits DDR2 SDRAM 64M X 16 DDR DRAM, 0.45 ns, PBGA92 1G bits DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68 1G bits DDR2 SDRAM 1克位DDR2 SDRAM内存
|
Elpida Memory, Inc.
|
HYB18T512160AF-5 HYB18T512800AF-3.7 HYB18T512400AF |
512-Mbit DDR2 SDRAM 512Mbit Double Data Rate (DDR2) Component
|
Infineon Technologies A...
|
EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒 512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a> 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks 2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
EBE51UD8ABFV EBE51UD8ABFV-AE-E EBE51UD8ABFV-BE-E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a> 512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
|
Elpida Memory
|
W3HG2128M72ACER-AD6 W3HG2128M72ACER403AD6XG |
2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP 2GB 2x128Mx72 DDR2 SDRAM的注册,瓦特/锁相环,葡萄多糖
|
Optrex America, Inc. 3M Company
|
EDE2108ABSE EDE2108ABSE-5C-E EDE2108ABSE-6E-E EDE2 |
2G bits DDR2 SDRAM 512M X 4 DDR DRAM, 0.45 ns, PBGA68 2G bits DDR2 SDRAM 256M X 8 DDR DRAM, 0.4 ns, PBGA68
|
ELPIDA MEMORY INC Elpida Memory, Inc.
|
P3R1GE4JGF |
1G bits DDR2 SDRAM
|
Deutron Electronics
|
HY5PS1G431F-Y5 HY5PS1G831F-Y5 HY5PS1G431F-Y6 HY5PS |
DDR2 SDRAM - 1Gb
|
Hynix Semiconductor
|
M378T2863EHS M378T2863FBS K4T1G044QE K4T1G044QF M4 |
DDR2 SDRAM Memory
|
Samsung semiconductor
|